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NTD4809NAT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 9.6A/58A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD4809NAT4G
- Description：MOSFET N-CH 30V 9.6A/58A DPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.6A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 11.5V
- Rds On (Max) @ Id, Vgs：9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1456 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for NTD4809NAT4G
Single FETs, MOSFETs Overview
The NTD4809NAT4G is a single N-channel power MOSFET manufactured by onsemi, housed in a DPAK (TO-252) surface-mount package. It features a drain-to-source voltage rating of 25 V and a continuous drain current capacity of 58 A at a case temperature of 25°C. The device exhibits a maximum on-resistance of 9 mΩ at 10 V gate drive and 14 mΩ at 4.5 V gate drive. Key electrical parameters include a total gate charge of 11 nC at 4.5 V and 25 nC at 11.5 V, with switching times such as a turn-on delay of 12.3 ns and fall time of 5.3 ns under specified test conditions.
Single FETs, MOSFETs Feature Summary
- Optimized low on-resistance to minimize conduction losses
- Low capacitance characteristics to reduce driver losses
- Optimized gate charge profile for minimized switching losses
Single FETs, MOSFETs Applications
- CPU Power Delivery
- DC-DC Converters
- Low Side Switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'T4G' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets lead-free (Pb-Free) requirements and RoHS compliance standards as documented in the manufacturer's official datasheet before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust performance in low-side switching and DC-DC conversion circuits. The logic-level gate threshold supports efficient driving from standard control interfaces, while the thermal resistance characteristics facilitate effective heat dissipation in compact surface-mount layouts.
Single FETs, MOSFETs Part Context
This part belongs to the NTD series of vertical power MOSFETs from onsemi, designed for general-purpose power switching applications. The NTD4809NA variant specifically targets efficiency improvements through advanced silicon technology, offering enhanced avalanche energy capability and optimized parasitic parameters compared to previous generations.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's documentation for verified cross-reference data or direct substitute part numbers. Ensure any replacement maintains compatibility with the required voltage, current, and thermal specifications.
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