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NTD4858N-35G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 25V 11.2A/73A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD4858N-35G
- Description：MOSFET N-CH 25V 11.2A/73A IPAK
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：11.2A (Ta), 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1563 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta), 54.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Stub Leads, IPAK
Single FETs, MOSFETs datasheet and documents for NTD4858N-35G
Single FETs, MOSFETs Overview
The onsemi NTD4858N-35G is a single N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 25 V and a continuous drain current of 11.2 A at ambient temperature, rising to 73 A at case temperature. The device exhibits a low on-resistance of 6.2 mΩ at 10 V gate drive and 19.2 nC typical gate charge at 4.5 V. Packaged in a DPAK (TO-252) surface-mount format, it supports a junction temperature range from -55 °C to +175 °C with a maximum power dissipation of 54.5 W at the case.
Single FETs, MOSFETs Feature Summary
- Low on-resistance minimizes conduction losses during operation
- Optimized gate charge characteristics reduce driver power requirements
- Enhanced thermal performance supports high current density in compact packages
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and material composition declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity level specifications to prevent package degradation during assembly processes.
Single FETs, MOSFETs Selection Notes
Evaluate thermal resistance parameters against system heat dissipation capabilities to ensure reliable operation within specified junction temperature limits. Compare gate charge values with available driver output strength to optimize switching speed and minimize transition losses. Verify package compatibility with existing PCB footprint designs and soldering profiles.
Single FETs, MOSFETs Part Context
This component belongs to the NTD48 series of power MOSFETs from onsemi, engineered for general-purpose power switching. The NTD4858N variant specifically targets low-voltage, high-current applications requiring efficient thermal management. The -35G suffix indicates lead-free packaging compliant with environmental directives.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference lists or contact the manufacturer for validated alternatives.
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