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NTD4906NAT4H is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 54A. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for NTD4906NAT4H
- Description：MOSFET N-CH 30V 54A
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for NTD4906NAT4H
FET, MOSFET Arrays Overview
The NTD4906NAT4H is a single N-channel Power MOSFET manufactured by onsemi. It features a DPAK (TO-252) surface-mount package and utilizes silicon technology. The device is characterized by a drain-source breakdown voltage of 30 V and a continuous drain current rating of 54 A. Its maximum on-resistance is specified at 5.5 mΩ when the gate-source voltage is 10 V, and 8.0 mΩ at 4.5 V. These electrical parameters are designed to minimize conduction losses in power switching applications.
FET, MOSFET Arrays Feature Summary
- Low R DS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
FET, MOSFET Arrays Applications
- CPU Power Delivery
- DC-DC Converters
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'T4H' against official onsemi documentation to confirm exact tape-and-reel packaging or environmental compliance status. Ensure the component matches the standard NTD4906NA family specifications regarding RoHS and halogen-free requirements before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for low-voltage, high-current DC-DC conversion where minimizing conduction loss is critical. The 30 V rating suits 12 V or 24 V bus systems. Verify that the thermal management design accommodates the DPAK package's power dissipation capabilities under the expected load conditions.
FET, MOSFET Arrays Part Context
This part belongs to the NTD4906N series of superjunction or advanced planar MOSFETs from onsemi, optimized for efficiency in power delivery networks. It serves as a high-performance alternative to standard MOSFETs in compact power stages requiring low on-resistance and fast switching characteristics.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include the NTD4906NAT4G variant, which shares identical electrical characteristics but may differ in packaging configuration. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' 30 V, 54 A DPAK MOSFETs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
