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NTD6416ANL-1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 19A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD6416ANL-1G
- Description：MOSFET N-CH 100V 19A IPAK
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：74mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：71W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for NTD6416ANL-1G
Single FETs, MOSFETs Overview
The NTD6416ANL-1G is a single N-channel logic level power MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 100 V and a continuous drain current of 19 A at case temperature. The device exhibits a maximum on-resistance of 80 mΩ and a typical gate charge of 25 nC at 10 V. It operates within a temperature range of -55 °C to +175 °C, with a maximum power dissipation of 71 W. The component utilizes an IPAK (TO-220AB) through-hole package with three pins.
Single FETs, MOSFETs Feature Summary
- Logic level gate drive capability for efficient control
- Enhanced mode operation for low on-state resistance
- High thermal stability with extended operating temperature range
Single FETs, MOSFETs Applications
- DC motor control circuits
- Power switching applications
- Load management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets, as variations like T4G indicate tape-and-reel packaging while NL-1G denotes tube packaging. Confirm the exact on-resistance value from the manufacturer's document, as sources may list 74 mΩ or 80 mΩ. Ensure the IPAK package type matches the design requirements before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust through-hole mounting and high current handling up to 19 A. The logic level gate threshold simplifies driver interface design. Verify that the thermal management solution supports the 71 W dissipation rating under intended operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's N-channel power MOSFET portfolio, designed for general-purpose switching. It serves as a discrete semiconductor solution for power electronics. The IPAK package provides mechanical stability for through-hole assembly processes in industrial and consumer equipment.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers.
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