NTGD3133PT1G

FET, MOSFET Arrays Overview

The NTGD3133PT1G is a dual P-channel enhancement-mode MOSFET array manufactured by onsemi. It features a 20 V drain-source voltage rating and supports a continuous drain current of 1.6 A. The device utilizes a 6-TSOP surface-mount package with three pins per channel configuration. Designed for low-voltage switching applications, it integrates two independent P-channel transistors within a single compact footprint to optimize board space.

FET, MOSFET Arrays Feature Summary

• Dual P-channel architecture providing two independent switching channels in one package
• Low voltage operation capability with 20 V maximum drain-source breakdown
• Compact surface-mount packaging designed for high-density circuit board layouts

FET, MOSFET Arrays Applications

• Low-side load switching in portable electronic devices
• Battery protection circuits requiring dual channel isolation
• General purpose signal routing in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity specifications. Confirm that the package dimensions align with the target PCB footprint requirements. Ensure the thermal management strategy accounts for the power dissipation limits defined in the official datasheet. Cross-reference the manufacturer part number to avoid confusion with similar series variants.

FET, MOSFET Arrays Selection Notes

Select this component when dual P-channel switching is required within a constrained physical area. The 20 V rating suits low-voltage logic interfaces and battery-powered systems. Consider the 1.6 A current capacity against the expected load requirements. Evaluate the thermal performance characteristics relative to the ambient operating conditions of the final assembly.

FET, MOSFET Arrays Part Context

This device belongs to the family of discrete field-effect transistors offered by onsemi. It serves as a solid-state switch alternative to mechanical relays in modern electronics. The dual configuration reduces component count compared to using separate single-channel MOSFETs. It addresses the industry trend toward miniaturization in mobile and wearable technology sectors.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.