NTGD3148NT1G

FET, MOSFET Arrays Overview

The NTGD3148NT1G is a dual N-channel power MOSFET manufactured by onsemi, housed in a TSOP-6 surface-mount package. It features a drain-to-source voltage (VDSS) of 20 V and supports a continuous drain current (ID) of 3.0 A at 25°C ambient temperature, with a pulsed current capability of 10 A. The device utilizes leading edge trench technology to achieve low on-resistance, specified as a maximum of 70 mΩ at VGS = 4.5 V and ID = 3.5 A. Key electrical characteristics include a gate threshold voltage below 1.5 V and a total gate charge of 3.8 nC. Thermal performance is defined by a junction-to-ambient thermal resistance of 140 °C/W under steady-state conditions.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact TSOP-6 package for space-constrained designs.
• Leading edge trench technology ensures low RDS(on) and fast switching speeds.
• Low gate threshold voltage enables efficient drive from low-voltage logic sources.
• Pb-free construction complies with environmental standards.

FET, MOSFET Arrays Applications

• DC-DC converters including buck and boost circuits
• Low side load switching
• Battery charging and protection circuits
• Load management in portable equipment such as cell phones and media players

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'T1G' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm that the component is marked as Pb-Free. Ensure the procurement documentation references the correct datasheet revision to align with the latest electrical specifications and mechanical outline dimensions provided by the manufacturer.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a small footprint. The 20 V rating and 3.0 A continuous current limit define its operational envelope. Consider the low gate threshold voltage for compatibility with low-voltage control signals. Evaluate the thermal resistance requirements against the expected power dissipation in the target application environment.

FET, MOSFET Arrays Part Context

This part belongs to the NTGD3148N series of dual N-channel MOSFETs. It shares functional similarities with other low-voltage power switches but is distinct due to its specific dual-channel integration and trench technology implementation. The TSOP-6 package provides a standardized form factor for surface mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the dual N-channel architecture, 20 V VDSS, and TSOP-6 package. Verify pinout compatibility, specifically the shared source and drain configurations typical of this package style. Cross-reference electrical parameters such as RDS(on) and QG to ensure equivalent performance in the existing circuit design.