NTGD4167CT1G

FET, MOSFET Arrays Overview

The NTGD4167CT1G is a dual enhancement-mode MOSFET from onsemi, integrating one N-channel and one P-channel transistor in a TSOP-6 surface-mount package. It features a maximum drain-source voltage of 30 V. The N-channel device provides a continuous drain current of 2.9 A with a typical on-resistance of 90 mΩ, while the P-channel device offers 2.2 A with a typical on-resistance of 300 mΩ. Both channels operate within a gate-source voltage range of ±12 V and support a junction temperature up to +150 °C. The component is designed for low-power switching applications requiring compact dual-channel integration.

FET, MOSFET Arrays Feature Summary

• Dual configuration combining N-channel and P-channel enhancement-mode transistors in a single package
• Low on-resistance characteristics optimized for efficient power switching
• Surface-mount TSOP-6 packaging suitable for space-constrained designs

FET, MOSFET Arrays Applications

• Battery protection circuits
• Power management modules
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches project requirements. Confirm RoHS compliance status through official manufacturer documentation before finalizing procurement. Cross-reference the full part number with distributor catalogs to validate availability and authenticity. Ensure storage conditions adhere to moisture sensitivity level guidelines specified in the datasheet.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-switch solution is required for 30 V systems. Compare the N-channel and P-channel on-resistance values against thermal dissipation limits in the intended enclosure. Verify that the gate charge parameters align with the driving circuit capabilities to ensure adequate switching speeds without excessive drive current demands.

FET, MOSFET Arrays Part Context

This part belongs to the NTGD4167C series of dual MOSFETs manufactured by onsemi. The series utilizes silicon technology for reliable performance in consumer and industrial electronics. The TSOP-6 package provides a small footprint compared to discrete solutions, facilitating automated assembly processes in high-volume manufacturing environments.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual N/P-channel MOSFETs in TSOP-6 packages with compatible 30 V ratings and similar current capacities. Verify pinout compatibility and electrical parameters such as Rds(on) and threshold voltage before substitution.