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NTH4L040N65S3F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 650V 65A TO247-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTH4L040N65S3F
- Description：MOSFET N-CH 650V 65A TO247-4
- Series：FRFET®, SuperFET® III
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.1mA
- Gate Charge (Qg) (Max) @ Vgs：158 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：5940 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：446W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for NTH4L040N65S3F
Single FETs, MOSFETs Overview
The NTH4L040N65S3F is an N-channel enhancement-mode Power MOSFET from onsemi’s SUPERFET III series. It features a TO-247-4 surface-mount package with a maximum drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 62 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 40 mΩ and a typical gate charge (Qg) of 132 nC. It operates within a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 379 W.
Single FETs, MOSFETs Feature Summary
- Utilizes SUPERFET III charge balance technology for low conduction and switching losses.
- Optimized body diode reverse recovery performance enhances system reliability.
- Capable of withstanding extreme dv/dt rates for robust operation.
Single FETs, MOSFETs Applications
- Automotive DC/DC converters
- High-efficiency power supply systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and electrical tolerances. Confirm RoHS compliance and lead time requirements directly with authorized distributors or the manufacturer before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage handling with minimized switching losses. Ensure thermal management solutions accommodate the specified power dissipation limits within the operating temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the SUPERFET III family, designed for miniaturization and efficiency in power electronics. It represents an advancement in super-junction MOSFET technology, offering improved performance over previous generations.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing existing components in established designs.
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