NTHC5513T1

FET, MOSFET Arrays Overview

The NTHC5513T1G is a complementary power MOSFET pair from onsemi, housed in the ChipFET package. It integrates an N-channel and a P-channel transistor within a single compact footprint to simplify circuit design. The device supports a drain-source voltage of 20 V. The N-channel component provides a continuous drain current of 3.9 A, while the P-channel counterpart delivers -4.1 A. This configuration is engineered for efficient switching applications requiring minimal board space and reduced component count.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs into a single package
• Designed for low-profile surface-mount assembly via ChipFET technology
• Optimized for high-efficiency switching with low on-resistance characteristics

FET, MOSFET Arrays Applications

• Low-side and high-side switching circuits
• DC-DC converter output stages
• Motor driver interfaces

FET, MOSFET Arrays Part Context

This component belongs to onsemi's ChipFET family, which focuses on integrating complementary MOSFET pairs to reduce PCB area. The NTHC5513 series specifically targets applications needing 20V capability with moderate current handling, offering a streamlined alternative to discrete dual-MOSFET solutions.

FET, MOSFET Arrays Replacement Considerations

Verify pinout compatibility and thermal performance when substituting. Ensure the replacement part matches the 20V rating and current capacity (approx. 4A). Check if the alternative uses the same ChipFET package dimensions for direct mechanical fit.