NTHD2102PT1

FET, MOSFET Arrays Overview

The NTHD2102PT1G is a dual P-channel power MOSFET manufactured by onsemi, housed in a leadless ChipFET-8 surface-mount package. It features a drain-source breakdown voltage of -20 V and a continuous drain current of -2.6 A at 25°C. The device exhibits a typical on-resistance of 130 mΩ at Vgs = -4.5 V and 170 mΩ at Vgs = -2.5 V. Key switching parameters include a gate charge of 6 nC, a rise time of 12 ns, and a fall time of 12 ns. Thermal performance is characterized by a maximum power dissipation of 1.1 W and an operating junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrated into a single leadless ChipFET-8 package for space-constrained designs.
• Optimized low on-resistance characteristics across standard logic-level gate drive voltages.
• Fast switching speeds with symmetric rise and fall times suitable for high-frequency applications.
• Enhanced thermal transfer capabilities inherent to the leadless chip form factor.

FET, MOSFET Arrays Applications

• DC-DC buck and boost converter circuits
• Power management modules requiring compact dual-switch solutions
• Low-voltage load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation, as variations such as T1 or T1G may indicate differences in tape-and-reel specifications or compliance markings rather than functional changes. Confirm RoHS status and moisture sensitivity levels prior to procurement to ensure compatibility with assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel topology is required within a minimal footprint. Ensure the application voltage remains below the 20 V rating and that the thermal design accommodates the 1.1 W power dissipation limit. Verify that the gate drive voltage aligns with the specified thresholds for optimal Rds(on) performance.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD series of dual MOSFETs from onsemi, designed specifically for applications demanding reduced board space through leadless packaging. The ChipFET technology provides improved thermal conductivity compared to traditional plastic packages while maintaining electrical isolation between channels.

FET, MOSFET Arrays Replacement Considerations

Direct replacements within the same family include NTHD2102PT1G and NTHD2102T. Cross-manufacturer equivalents should be evaluated based on matching pinout configurations, voltage ratings, and thermal resistance values to ensure mechanical and electrical compatibility.