NTHD4102PT3G

FET, MOSFET Arrays Overview

The NTHD4102PT3G is a dual P-channel enhancement mode MOSFET manufactured by onsemi. It features a ChipFET-8 surface-mount package and operates with a drain-source breakdown voltage of 20 V and a continuous drain current of 4.1 A. The device exhibits a maximum on-resistance of 120 mΩ at -4.5 V gate drive, with a gate threshold voltage of 1.5 V. Key switching parameters include a gate charge of 8.6 nC, rise and fall times of 12 ns, and an off-delay time of 32 ns. Power dissipation is rated at 600 mW, supporting operation within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration for efficient high-side switching applications
• Low on-resistance design minimizes conduction losses in power paths
• Fast switching characteristics support high-frequency operation requirements

FET, MOSFET Arrays Applications

• High-side load switching circuits
• Power management modules requiring compact dual-channel solutions
• Battery protection systems utilizing P-channel control

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions to validate electrical parameter consistency before integration into final designs.

FET, MOSFET Arrays Selection Notes

Select this component when dual independent P-channel control is required in a minimal footprint. Evaluate thermal performance based on the 600 mW dissipation limit and ambient operating conditions. Confirm that the 20 V rating aligns with system voltage levels to prevent breakdown during normal operation.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD4102P series of dual P-channel MOSFETs from onsemi. The series utilizes silicon technology optimized for low on-resistance and fast switching speeds. The ChipFET-8 package provides a compact solution for space-constrained printed circuit board layouts.

FET, MOSFET Arrays Replacement Considerations

Verify pinout compatibility and electrical ratings against alternatives such as the NTHD4102PT1G. Confirm package dimensions match existing footprints. Validate that substitute components meet the same 20 V and 4.1 A specifications.