FET, MOSFET Arrays NTHD4401PT1 product image

NTHD4401PT1

$0.12
  • Description:MOSFET 2P-CH 20V 2.1A CHIPFET
  • Series:-

SKU:aa6b0df11cb2 Category: Brand:

  
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NTHD4401PT1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.1A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD4401PT1

  • Description:MOSFET 2P-CH 20V 2.1A CHIPFET
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.1A
  • Rds On (Max) @ Id, Vgs:155mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 10V
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:ChipFET™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTHD4401PT1

NTHD4401PT1

FET, MOSFET Arrays Overview

The NTHD4401PT1 is a dual P-channel power MOSFET array manufactured by onsemi, housed in an 8-SMD ChipFET package. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.1A at 25°C. The device has a maximum power dissipation of 1.1W and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 1.2V max at 250µA, a gate charge (Qg) of 6nC max at 4.5V, and an input capacitance (Ciss) of 300pF max at 10V. The on-resistance (Rds(on)) is 155mΩ max at 4.5V Vgs and 2.1A Id.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel Configuration: Integrates two independent P-channel MOSFETs in a single leadless ChipFET package for space-efficient circuit design.
  • Logic Level Gate Drive: Optimized gate threshold characteristics allow direct interfacing with standard logic levels for efficient switching control.
  • Compact Leadless Package: Utilizes the ChipFET form factor to minimize footprint while providing enhanced thermal performance compared to traditional TSOP packages.

FET, MOSFET Arrays Applications

  • DC-DC Buck and Boost Converters
  • Power Switching Circuits
  • Battery Protection Modules

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to discontinued status. Confirm RoHS compliance requirements as the specific part number may not meet current environmental standards. Validate package integrity and pin alignment against the official datasheet before integration into production assemblies.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage applications requiring dual P-channel switching capabilities. Ensure the operating voltage remains below the 20V limit and current demands do not exceed 2.1A continuously. Consider thermal management strategies given the 1.1W power dissipation rating in the small ChipFET package.

FET, MOSFET Arrays Part Context

This component belongs to the NTHD44 series of dual-channel MOSFET arrays from onsemi. It shares architectural similarities with other ChipFET devices like the NTHD4508N but differs in channel type and current ratings. The series is designed for compact power management solutions where board space is constrained.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual P-channel MOSFETs such as the NTHD4102P based on voltage, current, and package specifications.

NTHD4401PT1NTHD4401PT1
$0.12
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