FET, MOSFET Arrays NTHD4401PT3G product image

NTHD4401PT3G

$0.20
  • Description:MOSFET 2P-CH 20V 2.1A CHIPFET
  • Series:-

SKU:4b3beeb3e094 Category: Brand:

  
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NTHD4401PT3G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.1A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD4401PT3G

  • Description:MOSFET 2P-CH 20V 2.1A CHIPFET
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.1A
  • Rds On (Max) @ Id, Vgs:155mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 10V
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:ChipFET™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTHD4401PT3G

NTHD4401PT3G

FET, MOSFET Arrays Overview

The NTHD4401PT3G is a dual P-channel power MOSFET from ON Semiconductor, packaged in the ChipFET SOT-363 (SC-88) form factor. It features a -20 V drain-source voltage rating and a continuous drain current of -3.0 A at 25°C. The device utilizes advanced trench technology to achieve low on-resistance, specifically an RDS(on) of 0.025 Ω at VGS = -4.5 V. Designed for high-efficiency switching applications, it offers fast switching speeds with typical turn-on and turn-off delays of 10 ns and 12 ns, respectively, at VDD = -10 V and RL = 25 Ω.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration integrated into a compact surface-mount package
  • Low on-state resistance optimized for efficient power handling
  • Fast switching characteristics suitable for high-frequency operation
  • Lead-free construction compliant with RoHS standards

FET, MOSFET Arrays Applications

  • DC/DC converter modules requiring compact footprint
  • Load switch circuits for portable electronic devices
  • Power management units in battery-operated equipment

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'T3G' against the manufacturer's current datasheet to confirm tape-and-reel packaging quantities and compliance status. Ensure that the component matches the required thermal and electrical specifications for the target application before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is needed in a minimal footprint. Compare RDS(on) values at the intended gate drive voltage and ensure the -20 V rating exceeds the maximum circuit voltage. Verify that the SOT-363 package thermal dissipation meets the system requirements.

FET, MOSFET Arrays Part Context

This part belongs to ON Semiconductor's ChipFET family of dual MOSFETs. It serves as a space-saving alternative to discrete single P-channel transistors in designs where board area is constrained. The device is commonly used in consumer electronics and industrial control systems requiring efficient power switching.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual P-channel MOSFETs in SOT-363 packages with similar voltage and current ratings, such as the NTHD4401PT1G or equivalent parts from other manufacturers offering -20V/-3A performance in SC-88 outlines.

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