NTHD4508NT1G

FET, MOSFET Arrays Overview

The NTHD4508NT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features an 8-pin ChipFET package with a leadless design, offering a footprint reduction of approximately 40% compared to TSOP-6 packages. The device supports a maximum drain-source voltage (V(BR)DSS) of 20 V and a continuous drain current (ID) of 4.1 A. Typical on-resistance (RDS(on)) values are specified at 60 mΩ at VGS = 4.5 V and 80 mΩ at VGS = 2.5 V. The component operates within a temperature range of -55 °C to +150 °C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single leadless ChipFET package for space-constrained designs.
• Low RDS(on) characteristics optimized for efficient power switching applications.
• Fast switching speed capabilities suitable for high-frequency DC-DC conversion.
• Enhanced thermal performance through direct heat transfer from the exposed pad.

FET, MOSFET Arrays Applications

• DC-DC Buck Converters
• DC-DC Boost Converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status and material declarations via manufacturer sustainability resources before integration. Ensure the selected variant matches the required tape-and-reel specifications for automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage, high-current applications requiring compact board space. Evaluate thermal management requirements based on the ChipFET package's heat dissipation capabilities. Compare RDS(on) values at specific gate voltages to ensure compatibility with available drive signals in the target circuit design.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's Power MOSFET portfolio, specifically utilizing the ChipFET technology line. It is designed as a surface-mount solution for modern electronics where size reduction and thermal efficiency are critical. The dual-channel architecture allows for half-bridge or synchronous rectifier configurations within a minimal footprint.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 20 V rating, 4.1 A current capacity, and 8-pin ChipFET package dimensions. Verify that alternative components offer comparable RDS(on) values at similar gate drive voltages to maintain circuit efficiency.

FET, MOSFET Arrays FAQ

What is the typical RDS(on) value at a gate-source voltage of 2.5 V?

The typical RDS(on) is 80 mΩ when measured at VGS = 2.5 V.

How does the ChipFET package footprint compare to traditional TSOP-6 packages?

The ChipFET package offers a footprint that is approximately 40% smaller than standard TSOP-6 packages.

Is the NTHD4508NT1G available in a lead-free package?

Yes, the component is available in a Pb-Free package compliant with RoHS standards.