NTJD1155LT1G

FET, MOSFET Arrays Overview

The NTJD1155LT1G is a P-Channel high-side load switch with integrated level-shift functionality, housed in an SC-88 package. It combines a P-Channel MOSFET and an N-Channel MOSFET to enable control by low-voltage logic signals. The device operates on supply lines from 1.8 V to 8.0 V and supports continuous load currents up to 1.3 A. Key electrical parameters include a drain-to-source breakdown voltage of -8.0 V, an on-resistance ranging from 130 mΩ to 320 mΩ depending on input voltage, and a gate threshold voltage between 0.4 V and 1.0 V. The component features internal ESD protection and operates within a junction temperature range of -55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

• Integrates a P-Channel load switch and an N-Channel level-shifter for direct logic control
• Supports low battery voltages and high load currents suitable for portable electronics
• Features extremely low on-resistance utilizing trench technology
• Includes internal ESD protection on the level-shift MOSFET

FET, MOSFET Arrays Applications

• Portable electronic equipment requiring low control signals
• High-side load switching applications
• Systems operating with low battery voltages

FET, MOSFET Arrays Procurement Notes

Verify the ordering suffix T1G corresponds to the tape and reel packaging configuration specified in the datasheet. Confirm that the component meets Pb-Free and RoHS compliance requirements as stated in the product description. Ensure the selected package matches the SC-88 (SOT-363) mechanical outline dimensions for proper PCB footprint compatibility.

FET, MOSFET Arrays Selection Notes

Select this component when a single-package solution is required for driving loads with low-voltage logic inputs. The integrated level-shift capability eliminates the need for external discrete transistors or complex driver circuits. Consider the thermal characteristics and maximum power dissipation limits relative to the expected steady-state and pulsed load currents in the target application environment.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD1155L series of power MOSFETs designed specifically for high-side switching applications. It represents a specialized integration where the N-Channel device facilitates the level-shifting function necessary to drive the P-Channel load switch effectively. The design targets efficiency and space savings in compact consumer devices.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the SC-88 package, 8 V rating, and integrated level-shift architecture. Verify pinout compatibility and electrical parameters such as RDS(on) and current handling capabilities before substitution.

FET, MOSFET Arrays FAQ

How does the NTJD1155LT1G handle logic signal levels?

The N-Channel MOSFET acts as a level-shifter, allowing the device to be driven by logic signals as low as 1.5 V.

What is the maximum continuous load current?

The device supports a continuous load current of ±1.3 A at 25 °C ambient temperature.

Is the level-shift MOSFET protected against electrostatic discharge?

Yes, the N-Channel MOSFET includes internal ESD protection.