NTJD4001NT1

FET, MOSFET Arrays Overview

The NTJD4001NT1 is a dual N-channel small signal MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 250 mA. The device has a maximum drain-source resistance (Rds(on)) of 2.5 Ω and a typical gate charge (Qg) of 0.9 nC at the specified gate-source voltage. Maximum power dissipation (Pd) is rated at 2.72 W. The component operates within a temperature range of -55°C to 150°C and is housed in a surface-mount SC-88 package with six pins, measuring 2.2 mm in length and 1 mm in height.

FET, MOSFET Arrays Feature Summary

• Low gate charge enables fast switching performance for efficient power management.
• SC-88 package provides a small footprint, approximately 30% smaller than TSOP-6.
• Gate is protected against electrostatic discharge (ESD).
• Available in lead-free packages compliant with green manufacturing standards.

FET, MOSFET Arrays Applications

• Low side load switch applications.
• Li-ion battery supplied devices such as cell phones, PDAs, and digital still cameras.
• Buck converter circuits.
• Level shifting functions.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The provided model lacks the 'G' suffix often associated with lead-free compliance in onsemi documentation. Confirm that the received component matches the required environmental specifications and pinout configuration before integration into the design.

FET, MOSFET Arrays Selection Notes

Select this component for space-constrained designs requiring dual N-channel isolation in a minimal footprint. Ensure the application voltage does not exceed 30 V and current requirements remain below 250 mA. Verify thermal management capabilities given the 2.72 W power dissipation rating in the SC-88 package.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's small signal MOSFET portfolio, specifically designed for portable electronics. It serves as a compact alternative to larger packages like TSOP-6 while maintaining necessary electrical characteristics for low-power switching tasks in mobile and consumer devices.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other dual N-channel MOSFETs in the SC-88 package only after verifying exact electrical parameter compatibility.