FET, MOSFET Arrays NTJD4105CT4G product image

NTJD4105CT4G

  • Description:MOSFET N/P-CH 20V/8V 0.63A SC88
  • Series:-

SKU:d0cdcd2c0019 Category: Brand:

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NTJD4105CT4G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V/8V 0.63A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD4105CT4G

  • Description:MOSFET N/P-CH 20V/8V 0.63A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V, 8V
  • Current - Continuous Drain (Id) @ 25°C:630mA, 775mA
  • Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
  • Power - Max:270mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTJD4105CT4G

NTJD4105CT4G

FET, MOSFET Arrays Overview

The NTJD4105CT4G is a complementary MOSFET array manufactured by onsemi, integrating N-channel and P-channel enhancement mode transistors within a single SOT-363 surface-mount package. The device features a drain-source breakdown voltage of 20 V for the N-channel and -8 V for the P-channel. Continuous drain current ratings are specified at 630 mA for the N-channel and -775 mA for the P-channel. On-resistance values are 290 mOhms and 220 mOhms respectively. Gate-source voltage limits range from -12 V to +12 V. The component operates within a temperature range of -55°C to +150°C with a power dissipation of 270 mW.

FET, MOSFET Arrays Feature Summary

  • Dual-channel complementary configuration in a compact SMD footprint
  • Logic-level gate drive compatibility for low-voltage control
  • High thermal stability suitable for demanding environments

FET, MOSFET Arrays Applications

  • Battery protection circuits
  • Load switching applications
  • Small signal amplification stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'T4G' against official manufacturer documentation to confirm tape and reel packaging specifications. Ensure the part number matches the exact electrical characteristics required for the design. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require matched N/P-channel pairs. Verify that the 20V/8V voltage ratings exceed the maximum circuit operating voltages. Confirm that the 270mW power dissipation capability aligns with the thermal management strategy of the target application.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD4105C series of small-signal complementary MOSFETs. It serves as an alternative to older discontinued packages like SC-88 while maintaining similar functional parameters. The series is designed for portable electronics requiring efficient power management in minimal board space.

FET, MOSFET Arrays Replacement Considerations

The FDG8842CZ is listed as a substitute option, though it has been marked as obsolete. Verify pinout compatibility and electrical parameter margins before considering any cross-replacement.

NTJD4105CT4GNTJD4105CT4G

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