NTJD4152PT1

FET, MOSFET Arrays Overview

The NTJD4152PT1G is a dual P-channel MOSFET array manufactured by onsemi, housed in a SOT-363 (SC-88) surface-mount package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 880 mA. The device exhibits a maximum on-resistance of 1 ohm at a gate-source voltage of -4.5 V. Operating characteristics include a gate-source voltage range of ±12 V, a threshold voltage of 1.2 V, and a total gate charge of 2.2 nC. Thermal performance specifies a power dissipation of 272 mW, with an operational temperature range spanning from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrated into a compact six-terminal surface-mount footprint
• ESD protection circuitry included for enhanced signal integrity and component reliability
• Silicon-based enhancement mode technology optimized for low-voltage switching applications

FET, MOSFET Arrays Applications

• Portable electronic devices requiring efficient power management
• Battery-powered equipment utilizing low-voltage DC sources
• Signal routing and switching within consumer electronics circuits

FET, MOSFET Arrays Procurement Notes

Verify the complete part number includes the trailing 'G' suffix, indicating RoHS compliance, as distributors often list the base model without it. Confirm the specific tape-and-reel quantity matches project requirements before ordering. Ensure the supplier source is authorized to guarantee component authenticity and traceability.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel switch is required in a minimal footprint. The 20 V rating suits low-voltage systems, while the 880 mA current capability supports moderate load switching. Compare the 1 ohm on-resistance against thermal constraints to ensure adequate heat dissipation within the small SOT-363 package dimensions.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's portfolio of dual MOSFET arrays designed for space-constrained designs. It serves as a functional alternative to single-channel solutions where multiple switches are needed. The SC-88 package allows for high-density PCB layouts common in modern mobile and wearable hardware architectures.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters with potential alternatives from other manufacturers before implementation.