NTJD4152PT2G

FET, MOSFET Arrays Overview

The NTJD4152PT2G is a dual P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 880 mA. The device incorporates an integrated ESD protection diode with a forward voltage (Vf) of -0.8 V. Key electrical parameters include a gate-source threshold voltage (Vgs(th)) of 1.2 V, a typical gate charge (Qg) of 2.2 nC at the specified gate-source voltage, and a maximum drain-source on-resistance (Rds(on)) of 1 Ω. The component operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 350 mW.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration in a compact surface-mount package
• Integrated ESD protection diode for signal line safeguarding
• Enhancement mode operation optimized for low-voltage switching

FET, MOSFET Arrays Applications

• ESD protection for high-speed data lines
• Low-side or high-side switching in portable electronics
• Signal routing and level shifting in mobile devices

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'T2G' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles and check for RoHS compliance markings on the reel label. Confirm that the ordering code matches the exact pinout and thermal characteristics required for the target PCB layout.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel MOSFET with integrated ESD protection is required for space-constrained designs. The 20 V rating suits low-voltage logic interfaces. Verify that the 880 mA current limit meets the load requirements and that the 1 Ω on-resistance provides acceptable conduction losses for the application.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD series of trench small-signal MOSFETs from onsemi. It is functionally similar to the NTJD4152P and NTJD4152PT1G, sharing identical electrical characteristics and package dimensions. The primary distinction lies in the packaging variant indicated by the suffix, which affects shipping format rather than semiconductor performance.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include NTJD4152PT1G and NTJD4152P. These parts share the same die specifications and pinout. Verify that the alternative packaging type (e.g., cut tape vs. reel) meets production handling requirements before substitution.