FET, MOSFET Arrays NTJD4401NT4 product image

NTJD4401NT4

$0.14
  • Description:MOSFET 2N-CH 20V 0.63A SC88
  • Series:-

SKU:0cea2b4e3f39 Category: Brand:

  
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NTJD4401NT4 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 0.63A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD4401NT4

  • Description:MOSFET 2N-CH 20V 0.63A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:630mA
  • Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
  • Power - Max:270mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTJD4401NT4

NTJD4401NT4

FET, MOSFET Arrays Overview

The NTJD4401NT4 is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It is housed in an SC-88 surface-mount package and features integrated ESD protection circuitry. The device supports a drain-source voltage of 20 V and a continuous drain current of 630 mA at 25°C. Key electrical parameters include a maximum on-resistance of 445 mΩ at a gate-source voltage of 4.5 V, with a typical gate charge of 1.3 nC. The component operates within a junction temperature range of -55°C to +150°C and dissipates up to 550 mW of power.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for space-efficient circuit design
  • Integrated electrostatic discharge (ESD) protection
  • Logic-level gate drive capability for low-voltage applications

FET, MOSFET Arrays Applications

  • Battery management systems
  • Portable consumer electronics
  • Signal switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm tape-and-reel quantities and packaging specifications. Confirm RoHS compliance status and lifecycle stage through authorized distributors or direct manufacturer channels before procurement planning.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching in minimal footprint applications. Ensure the required continuous current does not exceed 630 mA and that the operating voltage remains below the 20 V limit. Verify thermal management requirements align with the 550 mW power dissipation rating.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's small-signal MOSFET portfolio, specifically designed for low-power switching tasks. It shares functional similarities with other devices in the NTJD series but is distinguished by its specific 20 V rating and SC-88 package dimensions.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with NTJD4401NT1G for potential pin-compatible alternatives. Verify electrical parameter equivalence and package compatibility before substitution.

NTJD4401NT4NTJD4401NT4
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