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NTL4502NT1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 4N-CH 24V 11.4A 16QFN. Review the specifications below when checking this part for your BOM.
The NTL4502NT1 is a quad N-channel enhancement mode Power MOSFET from onsemi, housed in a PInPAK (CASE 495) surface-mount package. It integrates four independent devices within a single component to achieve significant footprint reduction. The device features a drain-to-source voltage rating of 24 V and supports continuous drain currents up to 15 A at 25°C or 11.4 A under specific thermal constraints. Typical on-resistance values are 8.0 mΩ at 10 V gate drive and 11.2 mΩ at 4.5 V gate drive. Key electrical characteristics include a total gate charge of 13 nC and a forward diode voltage of 1.2 V at 15 A.
Verify the ordering suffix NT1 indicates reel packaging with a quantity of 1500 units per reel. Confirm the package designation corresponds to CASE 495 (PInPAK). Ensure that the maximum ratings regarding junction temperature and thermal resistance align with the specific PCB copper area and pad size utilized in the target application design.
Select this component when space optimization is critical, as it provides 200% footprint reduction compared to similar DPAK solutions. Evaluate the thermal requirements carefully, noting the junction-to-ambient resistance varies significantly based on the FR4 board copper area. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level.
This part belongs to the NTL4502N series of quad power MOSFETs manufactured by onsemi. It utilizes the PInPAK advanced leadless power integrated package technology designed to enhance thermal performance while reducing the physical size required on the printed circuit board relative to traditional packages.
Direct replacements must match the quad configuration, 24 V rating, and PInPAK (CASE 495) footprint. Verify that any substitute component offers comparable on-resistance and thermal resistance characteristics to maintain the original circuit's efficiency and thermal management capabilities.
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