FET, MOSFET Arrays NTLJD2104PTBG product image

NTLJD2104PTBG

$0.22
  • Description:MOSFET 2P-CH 12V 2.4A 6WDFN
  • Series:-

SKU:0e7b79139f23 Category: Brand:

  
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NTLJD2104PTBG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 12V 2.4A 6WDFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTLJD2104PTBG

  • Description:MOSFET 2P-CH 12V 2.4A 6WDFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:2.4A
  • Rds On (Max) @ Id, Vgs:90mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:467pF @ 6V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-WDFN (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTLJD2104PTBG

NTLJD2104PTBG

FET, MOSFET Arrays Overview

The NTLJD2104PTBG is a single P-channel power MOSFET manufactured by onsemi, utilizing the μCool technology. It is housed in a compact WDFN package with dimensions of 2x2 mm and features an exposed drain pad for efficient thermal dissipation. The device is rated for a maximum drain-source voltage of -20 V and supports a continuous drain current of -7.5 A. Key electrical characteristics include a low on-resistance (RDS(on)) of 1.2 mΩ at a gate-source voltage of -4.5 V, enabling operation at low logic levels. It operates within a temperature range of -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

  • Utilizes μCool technology for optimized performance in a small footprint
  • Features an exposed drain pad for superior thermal conduction
  • Low RDS(on) rating suitable for low voltage logic level gate drive
  • RoHS compliant and halogen-free construction

FET, MOSFET Arrays Applications

  • High side load switching
  • DC-DC converters including buck and boost circuits
  • Battery and load management in portable equipment
  • Li-Ion battery linear mode charging

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'PTBG' against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the component meets all relevant RoHS and environmental standards required for the target application before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact P-channel MOSFET with high thermal efficiency. The 2x2 mm WDFN package is ideal for space-constrained designs. Verify that the gate drive voltage aligns with the low RDS(on) specification to ensure optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's μCool family of power MOSFETs, designed for high-efficiency switching applications. The WDFN package provides a footprint comparable to SC-88 while offering enhanced thermal capabilities through the exposed pad design, making it suitable for modern portable electronics.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet for recommended replacement devices. Verify pinout compatibility and electrical specifications before substituting with alternative P-channel MOSFETs from other manufacturers.

NTLJD2104PTBGNTLJD2104PTBG
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