NTLJD3115PT1G

Overview

The NTLJD3115PT1G is a dual P-channel MOSFET array manufactured by onsemi. It features a WDFN-6-EP (2x2 mm) surface-mount package. The device supports a drain-source voltage of 20 V and continuous drain currents ranging from 2.3 A to 4.1 A depending on the specific datasheet reference. On-resistance is specified at approximately 75 mΩ to 106 mΩ. Power dissipation capabilities vary between 710 mW and 2.3 W in thermal analyses.

Feature Summary

• Dual independent P-channel MOSFET configuration within a single compact footprint
• Low on-resistance design for efficient power switching applications
• Lead-free WDFN package optimized for high-density surface-mount assembly

Applications

• Battery protection circuits
• Power management modules
• Load switching applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm current availability status as the part may be discontinued or subject to long lead times. Ensure packaging specifications match project requirements for tape and reel quantities. Cross-reference datasheet revisions to validate electrical parameters against current production standards.

Selection Notes

Evaluate thermal performance constraints given the small WDFN package size. Compare on-resistance values across different manufacturer sources to ensure compatibility with circuit efficiency targets. Verify voltage ratings align with system operating conditions. Consider pinout compatibility when replacing existing designs.

Part Context

This component belongs to onsemi's portfolio of power MOSFET arrays designed for space-constrained electronics. The dual configuration allows for synchronized control of two loads or bridge configurations. It serves as a solution for portable devices requiring efficient power routing.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching voltage, current, and package specifications.