FET, MOSFET Arrays NTLJD3181PZTAG product image

NTLJD3181PZTAG

$0.21
  • Description:MOSFET 2P-CH 20V 2.2A 6WDFN
  • Series:-

SKU:20e8d1d41a13 Category: Brand:

  
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NTLJD3181PZTAG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.2A 6WDFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTLJD3181PZTAG

  • Description:MOSFET 2P-CH 20V 2.2A 6WDFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.2A
  • Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:450pF @ 10V
  • Power - Max:710mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-WDFN (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTLJD3181PZTAG

NTLJD3181PZTAG

FET, MOSFET Arrays Overview

The NTLJD3181PZTAG is a dual P-channel MOSFET array manufactured by onsemi, designed for surface-mount applications. It features a 20V drain-source voltage (VDSS) rating and supports a continuous drain current of 2.2A. The device utilizes a 6-WDFN package with dimensions of 2x2 mm, offering a maximum power dissipation of 710mW. Key electrical characteristics include a gate threshold voltage (VGS(th)) of 1V at 250µA, a maximum gate charge (Qg) of 7.8nC at 4.5V, and an input capacitance (Ciss) of 450pF at 10V. It operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration in a compact surface-mount package
  • Logic-level gate drive capability for direct interface with digital controllers
  • High thermal performance with a 6-WDFN bare pad design

FET, MOSFET Arrays Applications

  • Portable battery-powered devices requiring efficient power switching
  • Low-voltage load switch circuits in consumer electronics
  • Power management sections in mobile communication hardware

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TAG against official onsemi documentation to confirm tape and reel specifications or marking details. Confirm component availability status as distribution data may indicate end-of-life conditions. Ensure the ordering part number matches the exact package and pinout requirements for your PCB layout.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. Verify that the 20V VDSS rating exceeds the maximum circuit voltage. Check that the 2.2A current limit meets the load requirements and that the logic-level threshold allows compatibility with the system's control voltage levels.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal MOSFET arrays optimized for space-constrained designs. The WDFN package provides thermal advantages through exposed pads. It serves as a discrete alternative to integrated power switches in cost-sensitive portable applications.

FET, MOSFET Arrays Replacement Considerations

Consult onsemi datasheets for direct replacements with identical pinouts and electrical ratings. Verify package compatibility before substitution. Generic equivalents may differ in RDS(on) or thermal resistance.

NTLJD3181PZTAGNTLJD3181PZTAG
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