NTLJD3183CZTBG

FET, MOSFET Arrays Overview

The NTLJD3183CZTBG is a dual complementary power MOSFET array from onsemi, featuring an N-channel and a P-channel device integrated in a single package. It supports a maximum drain-source voltage of 20V for both channels. The N-channel configuration provides a continuous drain current of 3.2A, while the P-channel offers 2.6A. Both transistors exhibit a low on-resistance of 100mΩ. The component is housed in a compact 6-WDFN (2x2) surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual complementary structure integrating N-channel and P-channel MOSFETs
• Low on-resistance of 100mΩ for efficient power switching
• Integrated ESD protection capabilities

FET, MOSFET Arrays Applications

• Battery protection circuits
• Power management modules
• Load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'CZTBG' to ensure correct tape-and-reel packaging and RoHS compliance status. Confirm that the 6-WDFN footprint matches the target PCB design. Cross-reference the manufacturer's latest datasheet for thermal derating curves and absolute maximum ratings to prevent operational failures under high-temperature conditions.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require paired N/P-channel switching with minimal parasitic inductance. The 20V rating suits low-voltage systems. Ensure the application current remains within the 3.2A and 2.6A limits. Consider the 6-WDFN thermal performance for heat dissipation requirements compared to larger packages.

FET, MOSFET Arrays Part Context

This part belongs to onsemi’s discrete semiconductor product line, specifically categorized under FET and MOSFET arrays. It serves as a compact solution for managing bidirectional or complementary power paths in portable electronics and automotive subsystems where board area is limited.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes with identical 6-WDFN pinouts and 20V/100mΩ specifications. Verify if alternative dual MOSFETs offer improved thermal resistance or higher current ratings if system margins are tight.