ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
NTLJD4116NT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 2.5A 6WDFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for NTLJD4116NT1G
- Description：MOSFET 2N-CH 30V 2.5A 6WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.5A
- Rds On (Max) @ Id, Vgs：70mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：427pF @ 15V
- Power - Max：710mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-WDFN (2x2)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for NTLJD4116NT1G
FET, MOSFET Arrays Overview
The NTLJD4116NT1G is a dual N-channel enhancement mode MOSFET from onsemi’s uCool series. It features a 30 V drain-source voltage rating and a continuous drain current of 3.7 A. The device exhibits a low on-resistance of 0.047 Ω at a gate-source voltage of 4.5 V, with a threshold voltage of 700 mV. Designed for surface mount applications, it utilizes a compact 6-pin WDFN package. The component supports a maximum power dissipation of 1.5 W and operates within a junction temperature range up to 150 °C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration in a single package
- Low on-resistance for improved system efficiency
- Low threshold voltage for easy drive compatibility
- Compact WDFN footprint for space-constrained designs
FET, MOSFET Arrays Applications
- DC-DC converter output stages
- Load switching circuits
- Power management modules
FET, MOSFET Arrays Procurement Notes
Verify the exact part number against official manufacturer documentation to ensure correct revision and suffix alignment. Confirm that the WDFN package dimensions match the target PCB layout requirements. Check for RoHS compliance status as specified in the latest datasheet release notes before finalizing procurement specifications.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel topology is required in a minimal footprint. Ensure the application voltage remains below the 30 V limit and current demands do not exceed 3.7 A continuously. Consider thermal management strategies given the 1.5 W power dissipation capability in the small WDFN package.
FET, MOSFET Arrays Part Context
This device belongs to onsemi’s uCool series, which focuses on low on-resistance performance. It serves as a discrete solution for power switching applications where size and efficiency are critical constraints. The dual configuration allows for half-bridge or synchronous rectifier implementations without requiring separate components.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for verified equivalents. Generic replacements may differ in package dimensions or electrical characteristics such as Rds(on) and threshold voltage.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
