NTMD2C02R2

NTMD2C02R2

$0.34
  • Description:MOSFET N/P-CH 20V 5.2A 8SOIC
  • Series:-

SKU:887e5d414194 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 5.2A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.2A, 3.4A
  • Rds On (Max) @ Id, Vgs:43mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 10V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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NTMD2C02R2

Overview

The NTMD2C02R2 is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a 20 V drain-source voltage rating and a continuous drain current of 2 A. The device exhibits a maximum on-resistance of 150 mΩ at a gate-source voltage of 4.5 V. Packaged in an SOIC-8 surface-mount configuration, it supports a junction temperature range from -55 °C to +150 °C with a total power dissipation capacity of 625 mW.

Feature Summary

  • Dual channel configuration for space-efficient circuit designs
  • Low on-resistance characteristics for improved efficiency
  • Enhancement mode operation compatible with standard logic levels

Applications

  • DC-DC converter output stages
  • Load switching applications
  • Power management circuits

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors. Confirm that the package marking and electrical parameters match the design requirements before finalizing procurement decisions.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. Ensure the thermal management strategy accommodates the 625 mW power dissipation limit within the specified operating temperature range.

Part Context

This part belongs to the NTMD series of dual MOSFETs from onsemi. It provides a consolidated alternative to discrete single-channel devices, reducing board space and simplifying assembly processes in consumer and industrial electronics.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to guarantee compatibility.

NTMD2C02R2NTMD2C02R2
$0.34
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