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The NTMD2C02R2 is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a 20 V drain-source voltage rating and a continuous drain current of 2 A. The device exhibits a maximum on-resistance of 150 mΩ at a gate-source voltage of 4.5 V. Packaged in an SOIC-8 surface-mount configuration, it supports a junction temperature range from -55 °C to +150 °C with a total power dissipation capacity of 625 mW.
Verify the specific datasheet revision and ordering suffixes directly with onsemi or authorized distributors. Confirm that the package marking and electrical parameters match the design requirements before finalizing procurement decisions.
Select this component when a compact dual N-channel solution is required for low-voltage applications. Ensure the thermal management strategy accommodates the 625 mW power dissipation limit within the specified operating temperature range.
This part belongs to the NTMD series of dual MOSFETs from onsemi. It provides a consolidated alternative to discrete single-channel devices, reducing board space and simplifying assembly processes in consumer and industrial electronics.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to guarantee compatibility.