NTMD2C02R2G

Transistors Overview

The NTMD2C02R2G is a dual N-channel power MOSFET manufactured by onsemi, designed for surface-mount applications. It features a 20V drain-source breakdown voltage and supports a continuous drain current of 2A. The device exhibits a maximum on-resistance of 150 milliohms at a gate-source voltage of 4.5V. Operating within an ambient temperature range of -55°C to +150°C, it utilizes a SOIC-8 package. Key switching parameters include a typical gate charge of 3nC and a total power dissipation capacity of 600mW.

Transistors Feature Summary

• Dual configuration integrating two independent N-channel transistors in a single compact package
• Low on-resistance design optimized for efficient power switching with minimal conduction losses
• Enhanced thermal stability supporting operation across extended industrial temperature ranges

Transistors Applications

• DC-DC converter output stages requiring low-side switching
• Battery protection circuits for portable electronic devices
• Load switching applications in consumer electronics

Transistors Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions to confirm pinout compatibility and electrical parameter tolerances before integration into final designs.

Transistors Selection Notes

Select this component when a dual N-channel configuration is required within a limited footprint. Evaluate the 150 milliohm on-resistance against thermal constraints to ensure adequate heat dissipation within the SOIC-8 package limits. Confirm that the 20V voltage rating provides sufficient margin for the target circuit's operating conditions.

Transistors Part Context

This part belongs to the NTMD series of dual MOSFETs from onsemi, which focuses on providing integrated solutions for space-constrained designs. The series typically offers matched transistor characteristics for balanced performance in bridge or parallel configurations. It serves as a compact alternative to discrete dual-transistor implementations.

Transistors Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs with compatible 20V ratings and SOIC-8 packaging. Verify that replacement parts meet or exceed the original on-resistance and current handling capabilities. Check for pin-to-pin compatibility and similar thermal resistance values to ensure seamless integration.