NTMD3P03R2G

$1.45

Description：MOSFET 2P-CH 30V 2.34A 8SOIC
Series：-

SKU:9bce0367c5ac Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 2.34A 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：2.34A
Rds On (Max) @ Id, Vgs：85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：750pF @ 24V
Power - Max：730mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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NTMD3P03R2G

Overview

The NTMD3P03R2G is a dual P-Channel enhancement mode Power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 3.05 A. Its maximum drain-source on-resistance is specified at 85 mOhms, with a gate threshold voltage of 2.5 V and a total gate charge of 25 nC. The component operates within a temperature range of -55°C to +150°C, dissipates up to 2 W of power, and holds AEC-Q100 qualification for automotive reliability.

Feature Summary

Dual P-Channel configuration integrated into a single compact SOIC-8 package
AEC-Q100 qualified for automotive-grade reliability standards
Optimized low on-resistance characteristics to minimize conduction losses

Applications

DC-DC converter circuits
Power management modules
Load switching applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental and safety certifications for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Select this component when a dual P-Channel solution is required in an SOIC-8 footprint. Ensure the application voltage does not exceed the 30 V rating and that thermal management accommodates the 2 W power dissipation limit. Verify compatibility with standard logic gate drive voltages given the 2.5 V threshold specification.

Part Context

This part belongs to the NTMD3P03 series of dual P-Channel MOSFETs from onsemi. These devices are designed for general-purpose power switching applications requiring high efficiency and compact board space utilization through surface-mount integration.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility without circuit redesign.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.