NTMD4820NR2G

Overview

The NTMD4820NR2G is a dual N-channel Power MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 7.5 A. The device exhibits a maximum on-resistance of 40 mΩ at a gate-source voltage of 10 V. Key electrical characteristics include a gate threshold voltage of 1.5 V, a total gate charge of 4.8 nC, and a power dissipation rating of 1.95 W. The component operates within a temperature range of -55 °C to +150 °C junction temperature.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement-mode transistors into a single compact package for space-constrained designs.
• Low on-resistance performance optimized for efficient power switching with minimal conduction losses.
• Fast switching capabilities characterized by low gate charge and short rise/fall times suitable for high-frequency applications.

Applications

• DC-DC converter circuits requiring compact dual-switch topologies.
• Motor control systems utilizing half-bridge configurations.
• Power management modules for portable electronic devices.

Procurement Notes

Verify the specific revision status and availability through authorized onsemi distributors, as production lifecycles may affect supply continuity. Confirm that the SOIC-8 package dimensions and thermal characteristics align with the target PCB layout requirements before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required with a 30 V voltage rating and moderate current handling up to 7.5 A. Ensure the application design accounts for the 1.95 W power dissipation limit and utilizes adequate thermal management for the SOIC-8 footprint to maintain junction temperatures within the specified operational range.

Part Context

This part belongs to the NTMD4840N series of dual N-channel MOSFETs from onsemi. While sharing similar packaging and basic voltage ratings with other members like the NTMD4840NR2G, it is distinguished by its specific 40 mΩ on-resistance characteristic. The series targets general-purpose power switching applications where board space efficiency is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual N-channel MOSFETs by matching the 30 V rating, SOIC-8 package, and on-resistance specifications.