NTMD6P02R2SG

Overview

The NTMD6P02R2SG is a dual P-Channel Power MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source voltage (Vds) rating of 20 V and a continuous drain current (Id) of 6 A. The device exhibits a maximum on-resistance (Rds(on)) of 35 mΩ at Vgs = -4.5 V. Gate-source voltage limits are specified between -12 V and +12 V, with a typical gate charge (Qg) of 12 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation capability of 2 W.

Feature Summary

• Dual configuration integrates two independent P-channel transistors within a single compact SOIC-8 footprint for space-constrained designs.
• Low on-resistance characteristic minimizes conduction losses and thermal generation during high-current switching operations.
• Enhanced gate threshold voltage allows for efficient drive compatibility with standard logic-level control signals.

Applications

• DC-DC converter synchronous rectification stages
• Load switch circuits for power distribution management
• Motor driver output stages requiring complementary switching

Procurement Notes

Verify the specific suffix 'SG' against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS directives if required by the target assembly standards. Cross-reference the ordering code with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dual P-channel topology is required within an SOIC-8 package. The 20 V rating suits low-voltage DC systems. Evaluate the 35 mΩ Rds(on) against thermal constraints for the expected load current. Confirm that the 6 A current rating exceeds peak operational demands while maintaining safe junction temperatures.

Part Context

This part belongs to the NTMD6P02 series of dual P-channel MOSFETs from onsemi. It shares the same core die technology as the NTMD6P02R2G but utilizes the 'SG' suffix, which typically denotes specific packaging or tape-and-reel configurations defined by the manufacturer. It serves as a complement to N-channel variants in half-bridge applications.

Replacement Considerations

Direct substitutes include the NTMD6P02R2G, provided the packaging suffix does not alter functional parameters. Verify pinout alignment and Rds(on) specifications before substitution. Generic replacements must match the 20 V / 6 A / SOIC-8 requirements.