NTMFD001N03P9

$2.39

Description：MOSFET 2N-CH 30V 11A 8PQFN
Series：-

SKU:878e8aae443b Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NTMFD001N03P9 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 11A 8PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTMFD001N03P9

Description：MOSFET 2N-CH 30V 11A 8PQFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs：5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：7.9nC @ 4.5V, 43nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1224pF @ 15V, 6575pF @ 15V
Power - Max：960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PQFN (5x6)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NTMFD001N03P9

NTMFD001N03P9

FET, MOSFET Arrays Overview

The onsemi NTMFD001N03P9 is a dual N-channel power MOSFET utilizing Power Clip and Trench asymmetric technology. It features a compact 5x6 mm PQFN-8 (CASE 483AR) package. The device integrates two FETs with distinct ratings: Q1 offers a maximum continuous drain current of 57 A at TC=25°C, while Q2 provides 165 A under the same conditions. Both channels exhibit a Drain-to-Source Voltage (VDSS) of 30 V. On-resistance values are specified as low as 5.0 mΩ for Q1 and 1.0 mΩ for Q2 at VGS=10 V. Thermal resistance from junction to case is rated at 5.0 °C/W for Q1 and 3.0 °C/W for Q2.

FET, MOSFET Arrays Feature Summary

Small footprint design suitable for space-constrained layouts
Low on-resistance minimizes conduction losses
Reduced gate charge and capacitance lower driver losses

FET, MOSFET Arrays Applications

DC-DC Converters
System Voltage Rails

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard configuration utilizes a tape and reel format containing 3000 units per reel. Ensure compliance with RoHS standards and lead-free requirements during procurement planning. Confirm that the assembly plant code and date codes align with project specifications before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component based on the required current handling capabilities of each individual channel within the dual package. Evaluate thermal management strategies considering the junction-to-case resistance values provided in the datasheet. Verify that the gate drive voltage meets the threshold requirements for optimal on-resistance performance. Assess the PCB layout constraints to accommodate the 5x6 mm package dimensions effectively.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's portfolio of dual N-channel power MOSFETs designed for high-efficiency applications. It employs advanced trench gate technology to achieve superior electrical performance compared to traditional planar devices. The integration of two distinct FETs in a single package allows for optimized circuit designs requiring different current or switching characteristics within the same system.