NTMFD024N06CT1G

FET, MOSFET Arrays Overview

The NTMFD024N06CT1G is a dual N-channel power MOSFET manufactured by onsemi, housed in a DFN8 5x6 (SO8FL) package. It features a drain-to-source voltage of 60 V and a maximum continuous drain current of 24 A at 25°C case temperature. The device exhibits a typical on-resistance of 18.8 mΩ and a maximum of 22.6 mΩ at VGS = 10 V and ID = 3 A. Key electrical parameters include a total gate charge of 5.7 nC, input capacitance of 333 pF, and reverse recovery time of 23 ns. Thermal resistance from junction to case is 5.3 °C/W, supporting up to 28 W steady-state power dissipation at 25°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a compact 5x6 mm footprint for space-constrained designs
• Low on-resistance minimizes conduction losses during operation
• Reduced gate charge and capacitance lower driver circuit energy consumption
• Compliant with lead-free, halogen-free, and RoHS environmental standards

FET, MOSFET Arrays Applications

• Power tools and battery-operated vacuums
• UAVs/drones and material handling equipment
• Battery management systems and storage applications
• Home automation devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'T1G' against official documentation to confirm tape and reel packaging specifications. Ensure compatibility with standard surface-mount reflow soldering profiles. Confirm that the component meets all applicable regulatory requirements for the target market before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a small form factor. Evaluate thermal performance based on actual PCB copper pad area, as thermal resistance values depend heavily on the application environment. Consider the 60 V rating and 24 A current capability relative to peak load demands and duty cycles.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of low-voltage power MOSFETs designed for efficiency and compactness. It utilizes Trench technology to achieve low RDS(on) while maintaining fast switching characteristics. The SO8FL-DUAL package provides an exposed thermal pad to facilitate heat dissipation into the printed circuit board substrate.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for verified alternatives. Generic replacements may differ in pinout, thermal resistance, or electrical limits. Verify that any substitute maintains the same dual-channel configuration and package dimensions to ensure mechanical fit.