NTMFD4901NFT1G

Overview

The NTMFD4901NFT1G is a dual N-channel logic-level MOSFET array manufactured by onsemi, housed in an 8-DFN (5x6 mm) PowerTDFN package. It features asymmetric channel configurations with continuous drain currents of 10.3A and 17.9A at 25°C. The device supports a 30V drain-source voltage and achieves a maximum on-resistance of 6.5 mΩ at Vgs=10V. Key electrical parameters include a gate charge of 9.7nC at 4.5V, input capacitance of 1150pF at 15V, and a threshold voltage of 2.2V max at 250µA. Operating temperatures range from -55°C to 150°C TJ, with power dissipation ratings of 1.1W and 1.2W.

Feature Summary

• Dual N-channel configuration with integrated Schottky diodes for asymmetric circuit applications
• Logic-level gate drive capability enabling efficient control with low gate charge
• Compact 8-DFN surface-mount packaging designed for high-density PCB layouts

Applications

• DC-DC converter synchronous rectification stages
• Low-voltage motor driver circuits
• Power management systems requiring compact dual-switch solutions

Procurement Notes

Verify component authenticity through authorized distribution channels due to the part's End-of-Life status. Confirm RoHS3 compliance and MSL rating during sourcing. Review manufacturer Product Change Notices for any historical manufacturing updates or material declarations prior to final procurement decisions.

Selection Notes

Evaluate thermal performance based on specific PCB copper area and ambient conditions, as power dissipation limits are strict. Ensure gate drive voltage exceeds the threshold requirements for optimal Rds(on) performance. Consider the asymmetric current ratings when designing balanced or unbalanced load paths within the target application circuit.

Part Context

This component belongs to the NTMFD4901NF series of dual MOSFET arrays. It utilizes Trench and Power Clip technologies to minimize conduction and switching losses. The device is designed for efficiency in low-voltage power conversion environments where space constraints necessitate small footprint solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative dual N-channel MOSFETs by matching voltage ratings, package dimensions, and electrical characteristics.