NTMFD4951NFT1G

Single FETs, MOSFETs Overview

The NTMFD4951NFT1G is a single N-channel MOSFET from onsemi, designed for surface-mount applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 10.8A at 25°C. The device utilizes an SO8FL package, providing a compact form factor suitable for space-constrained designs. Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 2.2V at 250µA and a maximum gate charge (Qg) of 9.7nC at 4.5V. The input capacitance (Ciss) is specified at 1150pF when Vds is 15V. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration optimized for low-voltage switching applications
• Logic-level gate drive capability for efficient control interface integration
• Compact SO8FL surface-mount package design for high-density PCB layouts

Single FETs, MOSFETs Applications

• Low-side switching in portable electronic devices
• Power management circuits in consumer electronics
• Battery protection and load switch implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the SO8FL package dimensions align with your PCB footprint requirements. Ensure that thermal management strategies account for the power dissipation limits under your specific operating conditions. Cross-reference the ordering part number to avoid confusion with similar variants in the NTMFD series.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET is required in a small outline package. The 10.8A current rating supports moderate load applications. Consider the logic-level gate threshold if driving directly from low-voltage microcontrollers. Evaluate the thermal performance of the SO8FL package against your system's heat dissipation capabilities. Compare input capacitance and gate charge values against alternative packages for switching speed optimization.

Single FETs, MOSFETs Part Context

This MOSFET belongs to onsemi's discrete semiconductor transistor lineup, specifically within the single FET category. It complements other low-voltage power switches in the portfolio. The device is manufactured using metal-oxide-semiconductor technology. It serves as a fundamental building block for power distribution and control circuits in modern electronic systems requiring reliable switching performance.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the NTMFD series or other manufacturers offering 30V N-channel MOSFETs in SO8FL packages. Verify that substitute components meet or exceed the original Id, Vdss, and Rds(on) specifications. Ensure thermal resistance and package dimensions are compatible with existing board layouts.