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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 15.4A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：15.4A, 29.7A
- Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1960pF @ 15V
- Power - Max：1.13W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The NTMFD4C85NT3G is a PowerPhase dual N-channel MOSFET in an SO8FL (DFN8) package. It integrates a high-side FET (Q1) and a low-side FET (Q2). Q1 offers a maximum drain current of 25 A with RDS(on) of 3.0 mΩ at VGS=10V. Q2 provides 49 A with RDS(on) of 0.8 mΩ at VGS=10V. Both devices feature a 30 V breakdown voltage. The component minimizes parasitic inductances and board space requirements for synchronous buck applications.
Feature Summary
- Co-packaged power stage solution to minimize board space
- Minimized parasitic inductances
- Optimized devices to reduce power losses
Applications
- DC-DC Converters
- System Voltage Rails
- Point of Load
Procurement Notes
Verify the specific ordering suffix 'T3G' corresponds to the required tape and reel quantity of 5000 units. Confirm that the DFN8 package dimensions align with the target PCB footprint. Ensure compliance with Pb-Free, Halogen Free, and RoHS standards as specified in the datasheet documentation.
Selection Notes
Select this component for synchronous buck converters requiring compact form factors. Evaluate thermal performance based on the junction-to-ambient resistance values provided for different pad sizes. Consider gate charge characteristics for switching frequency optimization in point-of-load regulation designs.
Part Context
This device belongs to the PowerPhase family of co-packaged MOSFETs from onsemi. It is designed to replace discrete high-side and low-side MOSFET pairs in DC-DC converter topologies. The integration reduces layout complexity and improves efficiency by minimizing loop inductance between the driver and the power switches.
Replacement Considerations
Consult the datasheet's similar part number table for potential substitutes such as the NTMFD4C86N or NTMFD4C87N series. Verify pin compatibility and electrical parameters before substitution.
FAQ
What is the maximum continuous drain current for the low-side FET?
The low-side FET (Q2) has a maximum continuous drain current of 49 A under steady-state conditions at TA = 25°C.
What is the operating junction temperature range?
The operating junction and storage temperature range is -55 to +150 °C.
How does the RDS(on) vary with gate voltage?
For the high-side FET, RDS(on) increases from 3.0 mΩ at VGS=10V to 4.3 mΩ at VGS=4.5V. For the low-side FET, it increases from 0.8 mΩ at VGS=10V to 1.2 mΩ at VGS=4.5V.
