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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 11.7A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：11.7A, 14.2A
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1252pF @ 15V
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The NTMFD4C88NT3G is a dual N-Channel PowerPhase MOSFET in a DFN8 package. It integrates a high-side FET (Q1) and a low-side FET (Q2). Q1 offers a maximum RDS(on) of 5.4 mΩ at VGS=10V and 8.1 mΩ at VGS=4.5V, with a continuous drain current of 15.4 A at 25°C. Q2 provides a maximum RDS(on) of 4.4 mΩ at VGS=10V and 6.0 mΩ at VGS=4.5V, supporting 18.7 A continuous current at 25°C. Both devices feature a 30 V drain-to-source voltage rating.
Feature Summary
- Co-packaged power stage solution designed to minimize board space and parasitic inductances.
- Optimized device architecture intended to reduce power losses in switching applications.
Applications
- DC-DC Converters
- System Voltage Rails
- Point of Load
Procurement Notes
Verify the specific ordering suffix for the required shipping quantity. The NT3G suffix indicates a tape and reel packaging format containing 5000 units per reel. Confirm RoHS compliance status and lead times directly with authorized distributors or onsemi sales representatives prior to finalizing procurement plans.
Selection Notes
Select this component for designs requiring a compact dual-N-channel configuration with minimized parasitic inductance. Ensure the gate drive voltage meets the threshold requirements for the desired RDS(on), as performance varies significantly between 4.5 V and 10 V logic levels. Verify thermal management capabilities against the specified junction-to-ambient resistance values for the target PCB copper area.
Part Context
This part belongs to the NTMFS4943N series family, representing onsemi's PowerPhase technology. It serves as a dual-FET alternative to single-channel MOSFETs, integrating complementary high-side and low-side switches into a single DFN8 footprint to simplify half-bridge driver layouts.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching pinout compatibility, voltage ratings, and thermal characteristics if direct replacement is necessary.
