NTMFD5877NLT1G

Overview

The NTMFD5877NLT1G is a dual N-channel power MOSFET manufactured by onsemi, designed for compact and efficient circuit applications. It features a maximum drain-source voltage (Vdss) of 60V and supports a continuous drain current (Id) of 17A at ambient temperature. The device exhibits a low on-resistance (Rds(on)) of 39mΩ at Vgs=10V and Id=7.5A, which minimizes conduction losses. Key electrical parameters include a maximum gate charge (Qg) of 5.9nC at 4.5V and an input capacitance (Ciss) of 540pF at 25V. The component operates within a junction temperature range of -55°C to 175°C and is housed in an 8-DFN (5x6mm) package with wettable flanks.

Feature Summary

• Dual N-channel configuration integrated into a single surface-mount package for space-constrained designs.
• Low on-resistance architecture significantly reduces conduction power dissipation during operation.
• Low capacitance characteristics minimize gate drive energy requirements and switching losses.
• Wettable flank design facilitates automated optical inspection (AOI) for enhanced manufacturing quality control.

Applications

• Solenoid drivers in automotive systems
• Low-side and high-side driver circuits
• General-purpose power switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive supply chains. Check for any recent product change notices or lifecycle status updates directly from onsemi documentation before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel topology is required within a limited footprint. The 60V rating and 17A current capacity suit low-voltage DC-DC converters and motor control interfaces. Ensure the PCB thermal design accommodates the specified power dissipation limits of 3.2W at ambient and 23W at case temperatures to maintain reliability under load.

Part Context

This part belongs to onsemi's PowerTrench series of MOSFETs, specifically engineered for high-efficiency switching. The NTMFD5877NLT1G variant utilizes the SO8FL (8-DFN 5x6) package, which offers improved thermal performance compared to standard plastic packages. It is distinct from single-channel counterparts by integrating two independent N-channel devices in one housing.

Replacement Considerations

Direct pin-compatible replacements must match the 60V/17A rating and 8-DFN 5x6 footprint. Verify that alternative dual N-channel MOSFETs meet the same Rds(on) and Qg specifications to ensure equivalent thermal and switching performance in existing designs.