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The onsemi NTMFD5C462NLT1G is a dual N-channel enhancement mode power MOSFET housed in an 8-lead SO-8FL (DFN) package. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 70A at case temperature. The device exhibits a low on-resistance of 5.4 milliohms at 10V gate drive, with a typical gate charge of 16nC. Designed for high efficiency, it supports a junction temperature range from -55°C to +175°C and holds AEC-Q101 automotive qualification.
Verify the specific suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure component authenticity through authorized channels. Confirm that the ordering code matches the required electrical parameters and thermal characteristics for the target application environment.
Select this component when a dual N-channel topology is required in a small surface-mount package. Compare the 5.4 milliohm on-resistance against system loss requirements. Verify that the 40V rating provides sufficient headroom for the specific bus voltage. Check thermal management needs based on the 70A current capability.
This part belongs to the NVMFD5C462N series of dual MOSFETs. It shares the same core die technology as single-channel variants but offers integrated dual functionality. The series targets applications requiring space-saving solutions without compromising current handling capabilities.
Direct substitutes include other dual N-channel MOSFETs with similar 40V ratings and comparable on-resistance values in SO-8FL packages. Verify pinout compatibility and thermal performance before substitution.