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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 9.8A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9.8A (Ta), 27A (Tc)
- Rds On (Max) @ Id, Vgs：17mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：325pF @ 25V
- Power - Max：3.1W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NTMFD5C478NLT1G is a dual N-channel enhancement mode power MOSFET designed for surface-mount applications. It features a DFN-8 package with an 8-pin configuration and measures 5.1 mm in length, 6 mm in width, and 1.05 mm in height. The device supports a maximum drain-source voltage of 40 V and delivers a continuous drain current of 29 A. Its typical on-resistance is 14.5 mΩ, while the gate charge is 6.3 nC at 10 V. The component operates within a temperature range of -55°C to +175°C and has a maximum power dissipation of 23 W.
Feature Summary
- Dual channel architecture providing two independent N-channel transistors in a single compact package.
- AEC-Q101 qualified for automotive electronics reliability standards.
- Low thermal resistance design optimized for efficient heat dissipation in space-constrained layouts.
Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any recent production lifecycle notices such as NRND or PCN updates before finalizing procurement plans.
Selection Notes
Select this component when a dual N-channel configuration is required within a small footprint. Ensure the 40 V rating aligns with system voltage levels and verify that the 29 A current capacity meets load requirements under expected thermal conditions.
Part Context
This part belongs to the NVMFD5C4xxNL series of dual power MOSFETs from onsemi. These devices are engineered for high-efficiency switching applications requiring low on-resistance and robust thermal performance in automotive and industrial environments.
Replacement Considerations
Cross-reference with other parts in the NVMFD5C4xxNL family for pin-compatible alternatives. Verify electrical parameters match exactly if substituting with similar dual MOSFET packages from other manufacturers.
