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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 12A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs：11.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：793pF @ 25V
- Power - Max：3.1W (Ta), 45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：-
- Qualification：-
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Overview
The onsemi NTMFD5C672NLT1G is a dual N-channel power MOSFET housed in a DFN8 5x6 mm (SO8FL-Dual) package. It features a drain-to-source voltage of 60 V and a continuous drain current of 49 A at TC = 25°C. The device achieves a maximum on-resistance of 11.9 mΩ at VGS = 10 V and 16.8 mΩ at VGS = 4.5 V. Key electrical parameters include a total gate charge of 12.3 nC at VGS = 10 V, an input capacitance of 793 pF, and a reverse recovery time of 26 ns for the body diode. Thermal resistance from junction to case is 2.55 °C/W.
Feature Summary
- Dual N-Channel configuration within a compact 5x6 mm footprint
- Low on-resistance to minimize conduction losses
- Reduced gate charge and capacitance to lower driver losses
Applications
- Power management systems requiring compact dual-switch designs
- DC-DC converters with space-constrained layouts
- Automotive electronics applications
Procurement Notes
Verify the specific ordering suffix T1G corresponds to the 1500-unit tape and reel shipping format. Confirm that the component meets Pb-Free, Halogen Free, and BFR Free compliance standards as specified in the datasheet. Ensure the procurement documentation aligns with the CASE 506BT mechanical outline dimensions.
Selection Notes
Select this component when a dual N-channel topology is required in a small surface-mount package. Evaluate thermal performance based on the 2.55 °C/W junction-to-case resistance under steady-state conditions. Verify that the 60 V breakdown voltage and 49 A current ratings suit the specific circuit requirements.
Part Context
This part belongs to the NTMFD5C672NL series of dual N-channel MOSFETs manufactured by onsemi. It utilizes silicon technology and is designed for high-efficiency switching applications where board space is limited. The device is compliant with RoHS directives and offers enhanced reliability through its lead-free construction.
Replacement Considerations
Direct substitutes must match the 60 V rating, dual N-channel structure, and DFN8 5x6 mm package. Verify equivalent RDS(on) and QG specifications to ensure identical switching and conduction performance.
