NTMFD5C674NLT1G

Overview

The onsemi NTMFD5C674NLT1G is a dual N-channel enhancement mode MOSFET housed in an 8-lead SOFL (SO-8FL) surface-mount package with dimensions of 5x6 mm. It features a drain-source breakdown voltage (V_DSS) of 60 V and a gate-source voltage (V_GS) rating of ±20 V. At a case temperature of 25°C, the continuous drain current (I_D) is rated at 42 A, decreasing to 26 A at 100°C. The maximum power dissipation (P_D) is 37 W at 25°C and 18 W at 100°C. The device exhibits a low on-resistance (R_DS(on)) of 11.7 mΩ typical at V_GS = 10 V and 20.4 mΩ maximum at V_GS = 4.5 V. The junction-to-case thermal resistance (R_θJC) is 2.86 °C/W.

Feature Summary

• Dual configuration integrates two independent N-channel MOSFETs within a compact footprint to optimize PCB space utilization.
• Low on-resistance characteristics minimize conduction losses and heat generation during high-current operation.
• Low gate charge and capacitance values reduce switching energy loss and drive requirements for improved efficiency.
• Compliant with RoHS directives and free from lead and halogen substances for environmental safety.

Applications

• Power management circuits requiring efficient voltage conversion and regulation.
• High-density board designs where space constraints necessitate compact dual-channel components.
• Automotive electronics applications meeting AEC-Q101 qualification standards.

Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure that the requested part number matches the exact electrical ratings required for the target application. Cross-reference manufacturer documentation to validate compliance with current environmental regulations and automotive quality standards before finalizing procurement decisions.

Selection Notes

Select this component when a dual N-channel configuration is required within a 5x6 mm envelope. Evaluate thermal management capabilities based on the specified R_θJC and power dissipation limits at expected operating temperatures. Confirm that the 60 V voltage rating provides sufficient headroom for the circuit's maximum supply voltage and transient conditions.

Part Context

This device belongs to the NTMFD5C series of dual MOSFETs designed for high-efficiency power applications. It shares the same physical package and general performance profile as the NVMFD5C674NL variant, differing primarily in specific manufacturing lot or packaging details defined by the suffix. Both variants serve similar roles in compact power systems.

Replacement Considerations

The NVMFD5C674NL is a documented equivalent within the same family offering identical electrical characteristics and package dimensions. Verify pinout compatibility and thermal performance metrics before substituting to ensure seamless integration into existing designs without modification.