NTMFD5C680NLT1G

Overview

The NTMFD5C680NLT1G is a dual N-channel MOSFET array from onsemi, designed for high-efficiency power applications. It features a 60V drain-source voltage rating and supports continuous currents of 7.5A at ambient temperature and 26A at case temperature. The device utilizes the Trench6 process with Shielded Gate technology to achieve low on-resistance of 28mΩ. Packaged in an SO-8FL (DFN) footprint, it offers enhanced thermal performance and wettable flanks for improved optical inspection reliability.

Feature Summary

• Dual N-channel configuration optimized for synchronous rectification
• Advanced Trench6 Shielded Gate technology for low switching losses
• Wettable flank design enables reliable optical solder joint inspection

Applications

• Motor control systems
• Synchronous DC-to-DC regulators
• Automotive power management

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity. Confirm that the SO-8FL package variant aligns with PCB footprint requirements. Ensure compliance with AEC-Q101 standards if automotive qualification is mandatory for the target application environment.

Selection Notes

Select this component when compact size and high thermal efficiency are critical. The dual channel architecture reduces board space compared to discrete solutions. Evaluate the 28mΩ Rds(on) against load current requirements to ensure adequate thermal dissipation within the specified operating temperature range.

Part Context

This part belongs to onsemi's Trench6 series of medium-voltage MOSFETs. It represents an evolution in shielded gate trench technology, offering superior performance over previous generations. The family targets automotive and industrial markets requiring robust power switching capabilities.

Replacement Considerations

Direct substitutes include the NVMFD5C680NLWFT1G and NTMFD5C680NL variants. Verify pin compatibility and electrical parameters before substitution.