FET, MOSFET Arrays NTMFD6H846NLT1G product image

NTMFD6H846NLT1G

$1.74
  • Description:MOSFET 2N-CH 80V 9.4A 8DFN
  • Series:-

SKU:58d740b58a65 Category: Brand:

  
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NTMFD6H846NLT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 80V 9.4A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTMFD6H846NLT1G

  • Description:MOSFET 2N-CH 80V 9.4A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 31A (Tc)
  • Rds On (Max) @ Id, Vgs:15mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2V @ 21µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 40V
  • Power - Max:3.2W (Ta), 34W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTMFD6H846NLT1G

NTMFD6H846NLT1G

FET, MOSFET Arrays Overview

The onsemi NTMFD6H846NLT1G is a dual N-channel enhancement mode power MOSFET housed in an 8-pin DFN5x6 package. It features a drain-source voltage (V_DSS) of 80 V and a continuous drain current (I_D) of 31 A at T_C=100°C. The device exhibits a maximum on-resistance (R_DS(on)) of 15 mΩ at V_GS=10 V and I_D=5 A. Key switching parameters include a turn-on delay time (t_d(ON)) of 10 ns, rise time (t_r) of 40 ns, turn-off delay time (t_d(OFF)) of 20 ns, and fall time (t_f) of 7 ns under specific test conditions.

FET, MOSFET Arrays Feature Summary

  • Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs within a single compact package to reduce component count and PCB footprint.
  • Low On-Resistance: Optimized channel architecture minimizes conduction losses, enhancing thermal performance and overall system efficiency.
  • Fast Switching Characteristics: Engineered for rapid transition times, supporting high-frequency operation with reduced switching energy dissipation.

FET, MOSFET Arrays Applications

  • Automotive Power Distribution Systems
  • High-Density DC-DC Converter Modules
  • Industrial Motor Control Interfaces

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the suffix 'T1G' to ensure correct tape-and-reel packaging configuration. Confirm that the required automotive qualification standards align with project specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require dual-channel control with low conduction losses. Ensure gate drive voltages meet the threshold requirements for full enhancement. Verify thermal management strategies account for the specified power dissipation limits in the target application environment.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's NVMFD series of dual MOSFETs designed for automotive and industrial applications. It shares functional similarities with the NTMFD6H846NL but may differ in packaging or reel specifications. The series emphasizes compact form factors suitable for modern high-density electronics.

FET, MOSFET Arrays Replacement Considerations

The NTMFD6H846NL is a verified equivalent part number offering identical electrical characteristics. Verify pinout compatibility and thermal pad configurations before substitution to ensure seamless integration into existing layouts.

NTMFD6H846NLT1GNTMFD6H846NLT1G
$1.74
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