SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
NTMFD6H846NLT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 80V 9.4A 8DFN. Review the specifications below when checking this part for your BOM.
The onsemi NTMFD6H846NLT1G is a dual N-channel enhancement mode power MOSFET housed in an 8-pin DFN5x6 package. It features a drain-source voltage (V_DSS) of 80 V and a continuous drain current (I_D) of 31 A at T_C=100°C. The device exhibits a maximum on-resistance (R_DS(on)) of 15 mΩ at V_GS=10 V and I_D=5 A. Key switching parameters include a turn-on delay time (t_d(ON)) of 10 ns, rise time (t_r) of 40 ns, turn-off delay time (t_d(OFF)) of 20 ns, and fall time (t_f) of 7 ns under specific test conditions.
Verify the complete part number including the suffix 'T1G' to ensure correct tape-and-reel packaging configuration. Confirm that the required automotive qualification standards align with project specifications before finalizing procurement orders.
Select this component when space-constrained designs require dual-channel control with low conduction losses. Ensure gate drive voltages meet the threshold requirements for full enhancement. Verify thermal management strategies account for the specified power dissipation limits in the target application environment.
This device belongs to onsemi's NVMFD series of dual MOSFETs designed for automotive and industrial applications. It shares functional similarities with the NTMFD6H846NL but may differ in packaging or reel specifications. The series emphasizes compact form factors suitable for modern high-density electronics.
The NTMFD6H846NL is a verified equivalent part number offering identical electrical characteristics. Verify pinout compatibility and thermal pad configurations before substitution to ensure seamless integration into existing layouts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.