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NTMFS4744NT3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 7A 5DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMFS4744NT3G
- Description：MOSFET N-CH 30V 7A 5DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 11.5V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：880mW (Ta), 47.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：5-DFN (5x6) (8-SOFL)
- Package / Case：8-PowerTDFN, 5 Leads
Single FETs, MOSFETs datasheet and documents for NTMFS4744NT3G
Single FETs, MOSFETs Overview
The NTMFS4744NT3G is a single N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 7 A at ambient temperature, rising to 235 A at case temperature. The device utilizes an 8-PowerTDFN package with five exposed pads for thermal management. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20 V and a typical gate charge (Qg) of 17 nC at 4.5 V. The component operates within a junction temperature range of -55 °C to 150 °C.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode configuration
- Low gate charge for efficient switching performance
- Exposed pad design for effective thermal dissipation
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management modules
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer datasheets or environmental reports before integration into regulated designs. Check for product change notifications regarding manufacturing site transfers or material updates.
Single FETs, MOSFETs Selection Notes
Evaluate thermal resistance requirements based on the PowerTDFN package's exposed pad area. Ensure the driving circuit can supply sufficient gate charge without excessive delay. Verify that the 30 V drain-source voltage rating provides adequate margin for the target application's peak voltage transients.
Single FETs, MOSFETs Part Context
This component belongs to the NTMFS4 series of low-voltage MOSFETs designed for high-efficiency power switching. The series emphasizes compact packaging and low on-resistance to minimize conduction losses in space-constrained electronic systems.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same family, such as NTMFS4744NT1G, ensuring identical pinout and electrical ratings. Verify compatibility with existing PCB footprints and thermal vias.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
