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NTMFS4935NBT3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 13A/93A 5DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMFS4935NBT3G
- Description：MOSFET N-CH 30V 13A/93A 5DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：49.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4850 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：930mW (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：5-DFN (5x6) (8-SOFL)
- Package / Case：8-PowerTDFN, 5 Leads
Single FETs, MOSFETs datasheet and documents for NTMFS4935NBT3G
Single FETs, MOSFETs Overview
The NTMFS4935NBT3G is a single N-channel enhancement mode MOSFET manufactured by onsemi using silicon technology. It features an SO-8FL surface-mount package with eight pins. The device supports a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 93 A at case temperature. Its maximum drain-source on-resistance (Rds(on)) is specified as 3.2 mOhms. The component operates within a junction temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Single N-channel configuration for discrete switching applications
- Low on-resistance design to minimize conduction losses
- SO-8FL surface-mount package for compact board integration
Single FETs, MOSFETs Applications
- Power distribution circuits
- Load switching applications
- DC-DC converter output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure the selected variant matches the required thermal and electrical ratings for the target application environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component based on its 30 V rating and 93 A current capability in an SO-8FL package. Evaluate the 3.2 mOhm on-resistance against system efficiency requirements. Verify that the gate threshold voltage aligns with the available drive logic levels. Consider thermal management needs given the power dissipation characteristics in the specified package.
Single FETs, MOSFETs Part Context
This part belongs to the onsemi NTMFS series of N-channel MOSFETs designed for low-voltage, high-current applications. The series utilizes trench technology to achieve low on-resistance in compact packages. The NTMFS4935NBT3G specifically targets designs requiring efficient power switching within a 30 V system architecture.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers or variants within the same series.
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