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NTMFS4C910NAT3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is TRENCH 6 30V NCH. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMFS4C910NAT3G
- Description：TRENCH 6 30V NCH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for NTMFS4C910NAT3G
Single FETs, MOSFETs Overview
The NTMFS4C910NAT3G is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes Trench technology and is housed in an SO-8FL surface-mount package with six pins. The device features a drain-source voltage rating of 30 V and supports continuous drain currents up to 52 A. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a typical gate charge of 22.2 nC at 4.5 V, and a power dissipation capacity of 25.5 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Single N-channel configuration for efficient power switching applications
- Trench technology construction optimized for low on-resistance and fast switching performance
- SO-8FL surface-mount packaging designed for compact board layouts
Single FETs, MOSFETs Applications
- DC-DC converter circuits requiring high current density
- Power management systems utilizing surface-mount assembly
- General-purpose low-voltage power switching tasks
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and package variant against official manufacturer documentation before procurement. Confirm availability status as distribution channels may vary. Ensure compatibility with existing PCB footprints and thermal management requirements. Cross-reference the component marking code to prevent counterfeit substitution during sourcing.
Single FETs, MOSFETs Selection Notes
Select this component when a 30 V N-channel MOSFET with high current capability is required in a small form factor. Evaluate the thermal resistance and gate charge specifications against the target switching frequency. Ensure the application voltage and current limits remain within the absolute maximum ratings defined in the datasheet for reliable operation.
Single FETs, MOSFETs Part Context
This part belongs to the NTMFS4C series of power MOSFETs from onsemi. The series focuses on delivering high performance in compact packages suitable for modern electronics. These devices are engineered to balance conduction losses and switching speeds for efficient power conversion designs.
Single FETs, MOSFETs Replacement Considerations
Consult the official onsemi replacement guide or datasheet revision history for confirmed substitute part numbers. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying detailed electrical parameters.
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