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NTMFS5C426NT3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 40V 41A/235A 5DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMFS5C426NT3G
- Description：MOSFET N-CH 40V 41A/235A 5DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：41A (Ta), 235A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 128W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：5-DFN (5x6) (8-SOFL)
- Package / Case：8-PowerTDFN, 5 Leads
Single FETs, MOSFETs datasheet and documents for NTMFS5C426NT3G
Single FETs, MOSFETs Overview
The NTMFS5C426NT3G is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a 40V drain-source voltage rating and operates in surface-mount 5-DFN (5x6) packages with 8-SOFL configuration. The device supports a continuous drain current of 41A at ambient temperature and 235A at case temperature. Key electrical parameters include a maximum gate threshold voltage of 3.5V at 250µA, a maximum gate charge of 65nC at 10V, and a maximum input capacitance of 4300pF at 25V. The component offers a maximum power dissipation of 3.8W at ambient and 128W at case temperatures, with an operating junction temperature range from -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- Enhanced switching performance through optimized gate charge characteristics for efficient drive requirements
- High thermal conductivity design enabling significant power dissipation capabilities in compact surface-mount packaging
- Robust avalanche energy handling capability suitable for inductive load applications
Single FETs, MOSFETs Applications
- DC-DC converter circuits requiring low voltage high current regulation
- Power management systems utilizing synchronous rectification topologies
- Industrial motor control drives operating within specified voltage limits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status as required by project environmental standards. Check for any product change notifications regarding manufacturing site or material composition updates prior to finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Evaluate the thermal resistance characteristics against the expected heat sink or PCB copper area constraints. Ensure the gate drive voltage aligns with the specified threshold and charge requirements for optimal Rds(on) performance. Consider the physical dimensions of the 5-DFN package for adequate spacing and soldering reliability during assembly.
Single FETs, MOSFETs Part Context
This component belongs to the NTMFS5 series of N-channel MOSFETs designed for low-voltage, high-current applications. The series emphasizes efficiency and thermal performance in small form factors. The NTMFS5C426NT3G variant specifically targets designs needing robust current handling within a 40V system architecture.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing designs.
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