NTMFS5C612NLT1G-UIL5

Single FETs, MOSFETs Overview

The NTMFS5C612NLT1G-UIL5 is an N-channel enhancement mode MOSFET from onsemi, utilizing TrenchFET technology. It features a SO-8FL surface-mount package with a drain voltage rating of 60V and a continuous drain current of 219A at case temperature of 25°C. The device exhibits a maximum on-resistance of 1.8 milliohms at a gate-source voltage of 10V. Additional electrical characteristics include a gate charge of 73 nanocoulombs and a threshold voltage ranging from 1.2 to 2.0 volts. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET technology for optimized performance in power switching applications.
• Features a compact SO-8FL surface-mount package designed for high-density circuit board layouts.
• Provides low on-resistance to minimize conduction losses and improve system efficiency.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converter designs
• Power management integrated circuits (PMICs)
• Motor control systems requiring low-loss switching

Single FETs, MOSFETs Procurement Notes

Verify the specific UIL5 suffix against official manufacturer documentation to confirm any unique marking or tape-and-reel specifications. Confirm availability status as distribution channels may vary. Ensure compliance with RoHS standards and check for REACH SVHC declarations prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with low thermal resistance and high current capability is required in a small footprint. Compare the 1.8 milliohm on-resistance against load requirements to ensure adequate thermal performance without excessive heatsinking. Evaluate gate charge values relative to driver capabilities for optimal switching speed.

Single FETs, MOSFETs Part Context

This part belongs to the NTMFS series of N-channel PowerTrench MOSFETs by onsemi. The series is characterized by advanced trench gate technology aimed at reducing both on-resistance and gate charge. These devices are engineered for use in synchronous rectification and general power switching applications where size and efficiency are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.