NTMFS5C612NLT3G

Single FETs, MOSFETs Overview

The onsemi NTMFS5C612NLT3G is a single N-channel power MOSFET designed for high-efficiency power conversion. It features a 60V drain-source voltage rating and a maximum continuous drain current of 235A at 25°C case temperature, dropping to 166A at 100°C. The device utilizes a compact 5x6 mm SO-8FL surface-mount package. Key electrical characteristics include a low on-resistance (RDS(on)) of 1.5 mΩ at VGS=10V and a gate charge (QG) of 91 nC. It supports an operating junction temperature range from -55°C to +175°C with a maximum power dissipation of 167W at 25°C.

Single FETs, MOSFETs Feature Summary

• Compact 5x6 mm footprint enables dense PCB layout in space-constrained designs.
• Low on-resistance minimizes conduction losses for improved system efficiency.
• Reduced gate charge and capacitance lower driver losses during switching operations.

Single FETs, MOSFETs Applications

• High-density point-of-load (POL) converter modules
• Automotive power distribution systems
• Industrial motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets, as packaging options like reel or cut tape may vary by manufacturer lot. Confirm RoHS compliance status and lead times directly with authorized distributors prior to ordering. Ensure thermal management requirements align with the specified power dissipation ratings under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a balance of high current handling and small physical size is required. The low RDS(on) makes it suitable for applications prioritizing thermal performance and energy efficiency. Verify that the driving circuit can support the necessary gate voltage levels to fully enhance the channel and minimize resistance.

Single FETs, MOSFETs Part Context

This part belongs to the NTMFS5C series of N-channel MOSFETs from onsemi. The series is characterized by advanced silicon technology optimized for low on-resistance and fast switching speeds. These devices are engineered to meet the demands of modern power electronics requiring high reliability and compact form factors.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Ensure any substitute matches the SO-8FL package dimensions and thermal characteristics. Verify that the replacement device meets or exceeds the original RDS(on) and QG specifications for equivalent performance.